35 W CW over 1.8-512 MHz, 65 V Wideband RF Power LDMOS Transistor

MRFX035H

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Product Details

Features

  • Unmatched input and output allowing wide frequency range utilization
  • 50 ohm native output impedance
  • Qualified up to a maximum of 65 VDD operation
  • Characterized from 30 to 65 V for extended power range
  • High breakdown voltage for enhanced reliability
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • Included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    512
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    45.4
  • P1dB (Typ) (W)
    35
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 65 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1.8-54 (1,2)CW32 CW24.158.1
30-512 (2)CW26 CW15.142.3
230 (3)CW35 CW24.875.8

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
230 (3)CW> 65:1
at all Phase Angles
23.5
(3 dB Overdrive)
65No Device Degradation
1. Measured in 1.8-54 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.

Documentation

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