Documentation
Quick reference to our documentation types.
1-5 of 7 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
NI-780S-4L
600 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor
MRFX600H Receive alerts
The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.
Product Details
Features
- Unmatched input and output allowing wide frequency range utilization
- Output impedance fits a 4:1 transformer
- Device can be used single-ended or in a push-pull configuration
- Qualified up to a maximum of 65 VDD operation
- Characterized from 30 to 65 V for extended power range
- High breakdown voltage for enhanced reliability
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- Included in our product longevity program with assured supply for a minimum of 15 years after launch.
- RoHS compliant
- Industrial, scientific, medical (ISM)
- Laser generation
- Plasma generation
- Particle accelerators
- MRI, RF ablation and skin treatment
- Industrial heating, welding and drying systems
- Radio and VHF TV broadcast
- Aerospace
- HF communications
- Radar
- Mobile Radio
- HF and VHF communications
- PMR base stations
Key Parametrics
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- Frequency (Min) (MHz)
- 1.8
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- Frequency (Max) (MHz)
- 400
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- Supply Voltage (Typ) (V)
- 65
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- P1dB (Typ) (dBm)
- 57.8
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- P1dB (Typ) (W)
- 600
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- Test Signal
- Pulse
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- Power Gain (Typ) (dB) @ f (MHz)
- 26.4 @ 230
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- Efficiency (Typ) (%)
- 74.4
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- Thermal Resistance (Spec) (℃/W)
- 0.15
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- Matching
- unmatched
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- Class
- AB
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- Die Technology
- LDMOS
RF Performance Tables
Typical Performance
| Frequency (MHz) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
| 87.5-108 (1,2) | CW | 62 | 680 CW | 21.3 | 83.0 |
| 230 (3) | Pulse (100 µsec, 20% Duty Cycle) | 65 | 600 Peak | 26.4 | 74.4 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 230 (3) | Pulse (100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 2.5 Peak (3 dB Overdrive) | 65 | No Device Degradation |
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.
Design Resources
Design Files
5 design files
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Printed Circuit Boards and Schematics
MRFX600H 230 MHz PCB DXF file
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Printed Circuit Boards and Schematics
MRFX600H 87.5-108 MHz Reference Circuit Design Files
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Printed Circuit Boards and Schematics
MRFX600H 87.5-108 MHz PCB DXF file
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Printed Circuit Boards and Schematics
MRFX600H 230 MHz Test Fixture Design Files
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Calculators
MRFX600H RF Power Electromigration MTTF Calculation Program