140 W Avg. over 470-860 MHz, 50 V RF Power LDMOS Transistor

MRFE8VP8600H

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Product Details

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Features

  • Excellent thermal characteristics
  • High gain for reduced PA size
  • High efficiency for Class AB and Doherty operations
  • Integrated input matching and unmatched output
  • Extended negative gate-gource voltage range of -6 Vdc to +10 Vdc
  • RoHS compliant

RF Performance Tables

DBV-T Broadband Class AB Performance

VDD = 50 Vdc, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output PAR
(dB)
DVB-T (8k OFDM) 140 Avg. 47420.229.78.9
61020.734.58.2
81020.034.08.4

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pout
(W)
Test
Voltage
Result
860 DVB-T (8k OFDM) 20:1 at all
Phase Angles
125
(3 dB Overdrive)
50 No Device
Degradation

Documentation

Quick reference to our documentation types.

4 documents

Design Resources

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Design Files

1-5 of 6 design files

  • Models

    MRFE8VP8600H RF High-Power Model AWR Product Model Design Kit

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRFE8VP8600H RF High-Power Model ADS Product Model Design Kit

  • Printed Circuit Boards and Schematics

    MRFE8VP8600H PCB DXF file

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