470-960 MHz, 14 W Avg., 28 V, Broadband RF Power LDMOS Transistor

MRFE6S9060NR1

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Product Details

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Features

  • Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 21.1 dB
    Drain Efficiency: 33%
    ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
  • GSM EDGE Application
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920-960 MHz)
    Power Gain: 20 dB
    Drain Efficiency: 46%
    Spectral Regrowth @ 400 kHz Offset = –62 dBc
    Spectral Regrowth @ 600 kHz Offset = –78 dBc
    EVM: 1.5% rms
  • GSM Application
  • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920-960 MHz)
    Power Gain: 20 dB
    Drain Efficiency: 63%
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    470
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    47.8
  • P1dB (Typ) (W)
    60
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    14.0 @ AVG
  • Test Signal
    N-CDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    21.1 @ 880
  • Efficiency (Typ) (%)
    33
  • Thermal Resistance (Spec) (℃/W)
    0.88
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

Design Resources

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