1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

  • Not Recommended for New Designs
  • \n Contact support,\n your local sales representative or an\n \n NXP Authorized Distributor\n \n for product availability.\n

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Product Details

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  • Wide Operating Frequency Range
  • Very Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

RF Performance Tables

30-512 MHz Broadband

VDD = 50 Volts

512 MHz Narrowband

VDD = 50 Volts

Ruggedness, 512 MHz


Quick reference to our documentation types.

4 documents

Design Resources

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Design Files

1-5 of 9 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRFE6VP100HR5, MRFE6VP100HSR5 RF High-Power Model AWR Product Model Design Kit.

  • Models

    MRFE6VP100H, MRFE6VP100HS RF High-Power Model ADS Product Model Design Kit

  • Models

    MRFE6VP100HR5, MRFE6VP100HSR5 S-Parameters

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