1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor

MRFE6VS25L
  • Not Recommended for New Designs
  • \n Contact support,\n your local sales representative or an\n \n NXP Authorized Distributor\n \n for product availability.\n

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Product Details

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Features

  • Wide Operating Frequency Range
  • Very Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant

RF Performance Tables

HF, 1.8-30 MHz

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
1.8 to 30(1,3)Two-Tone
(10 kHz spacing)
25 PEP25.050.0–28

30-512 MHz Broadband

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
30-512(2,3)Two-Tone
(200 kHz spacing)
25 PEP17.332.0–32

512 MHz Narrowband

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
512(4)Pulse (100 µsec,
20% Duty Cycle)
25 Peak25.974.0
512(4)CW2526.075.0

Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
30(1)CW>65:1
at all Phase
Angles
0.11
(3 dB
Overdrive)
50No
Device
Degradation
512(2)CW0.95
(3 dB
Overdrive)
512(4)Pulse
(100 µsec,
20% Duty Cycle)
0.14 Peak
(3 dB
Overdrive)
512(4)CW0.14
(3 dB
Overdrive)
1. Measured in 1.8-30 MHz broadband reference circuit.
2. Measured in 30-512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.

Documentation

Quick reference to our documentation types.

4 documents

Design Resources

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Design Files

1-5 of 11 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRFE6VS25LR5 S-Parameters

  • Models

    MRFE6VS25LR5 RF High-Power Model AWR Product Model Design Kit.

  • Models

    MRFE6VS25L RF High-Power Model ADS Product Model Design Kit

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