700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

MRF8VP13350N

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Product Details

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Features

  • Internally input matched for ease of use
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50 VDD operation
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • RoHS Compliant
  • 915 MHz industrial heating/welding systems
  • 1300 MHz particle accelerators
  • 900 MHz TETRA base stations

RF Performance Tables

1300 MHz

VDD = 50 Vdc

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc

Load Mismatch/Ruggedness

1. Measured in 1300 MHz pulse narrowband test circuit.

Documentation

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1-5 of 8 documents

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Design Resources

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Design Files

5 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRF8VP13350N RF High-Power Model ADS Product Model Design Kit

  • Models

    MRF8VP13350N RF High-Power Model AWR Product Model Design Kit

  • Calculators

    MRF8VP13350N RF Power Electromigration MTTF Calculation Program

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