960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors

MRF6V12500H
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.
These RF power transistors, MRF6V12500H, MRF6V12500HS and MRF6V12500GS, are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.

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Features

  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant

Part numbers include: MRF6V12500GS, MRF6V12500H, MRF6V12500HS.

RF Performance Table

Typical Pulse Performance

VDD = 50 Volts, IDQ = 200 mA
Application Signal Type Pout(1)
(W)		 Freq.
(MHz)		 Gps
(dB)		 ηD
(%)
Narrowband
Short Pulse		Pulse
(128 µsec, 10% Duty Cycle)		500 Peak103019.762.0
Narrowband
Mode S ELM		Pulse
(48 x (32 µsec on, 18 µsec off),
Period 2.4 msec,
6.4% Long-term Duty Cycle)		500 Peak103019.762.0
BroadbandPulse
(128 µsec, 10% Duty Cycle)		500 Peak960-121518.557.0
1. Minimum output power for each specified pulse condition.
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power

Documentation

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Design Files

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