100 W CW over 136 to 941 MHz, 32 V Airfast® RF Power LDMOS Transistor

A3T09S100N

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Product Details

Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Wideband — full power across each mobile radio band
  • Exceptional thermal performance
  • High linearity for: TETRA, SSB, LTE
  • RoHs compliant
  • Output stage for VHF, UHF and 900 MHz 28 V base stations
  • Output stage for VHF, UHF and 900 MHz high performance mobile radios

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    50
  • P1dB (Typ) (W)
    90
  • Die Technology
    LDMOS

RF Performance Tables

Typical Single-Carrier W–CDMA Production Fixture Performance

VDD = 28 Vdc, IDQ = 450 mA, Pout = 15 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Avg. Pout
(W)
880 22.8 33.8 15

Typical Reference Circuit Performance

VDD = 28 Vdc, IDQ = 450 mA, Pin = 0.125 W, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
136 28.5 64.0 90

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal
Type
VSWR Pin
(W)
Test
Voltage
Result
880 CW > 10:1 at all Phase Angles 1.3 32 No Device Degradation
136 CW > 5:1 at all Phase Angles 0.2 32 No Device Degradation

Documentation

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4 documents

Design Resources

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Design Files

3 design files

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