12 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

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Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single−ended or in a push−pull configuration
  • Integrated ESD protection
  • Integrated stability enhancements
  • Wideband — full power across each band
  • Extreme ruggedness
  • High linearity for: TETRA, SSB

Part numbers include: AFM912N.

RF Performance Tables

Typical Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Gain
Compression
Pout
(W)
Gps
(dB)
ηD
(%)
941 P1dB 12.5 13.3 65.2
P3dB 15.7 11.3 69.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal
Type
VSWR Pin
(dBm)
Test
Voltage
Result
941 CW > 10:1 at all
Angles
32.9
(3 dB Overdrive)
10.0 No Device
Degradation

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Documentation

Quick reference to our documentation types.

4 documents

Design Files

Quick reference to our design files types.

1 design file

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