AFT05MS031N|31 W CW, 136-520 MHz, 13.6 V

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The AFT05MS031NR1 and AFT05MS031GNR1 are designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment.

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Data Sheet

Application Notes

Product Details

Features

Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
- 136-174 MHz
- 380-450 MHz
- 450-520 MHz
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost-effective Over-molded Plastic Packaging
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.

Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio

Key Parametrics

Frequency (Min) (MHz)

1.8
Frequency (Max) (MHz)

520
Supply Voltage (Typ) (V)

13.6
P1dB (Typ) (dBm)

44.9
P1dB (Typ) (W)

31
Die Technology

LDMOS

RF Performance Tables

VHF, 136-174 MHz

13.6 Vdc, T_A = 25°C, CW

Frequency (MHz)	G_ps (dB)	η_D (%)	P1dB (W)
136-174	23.2	62.0	31

UHF, 380-520 MHz

13.6 Vdc, T_A = 25°C, CW

Frequency (MHz)	G_ps (dB)	η_D (%)	P1dB (W)
380-450	18.3	64.1	31

520 MHz Narrowband

13.6 Vdc, T_A = 25°C, CW

Frequency (MHz)	G_ps (dB)	η_D (%)	P1dB (W)
450-520	17.7	62.0	31
520	17.7	71.4	33

Ruggedness, 520 MHz

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
520	CW	>65:1 at all Phase Angles	1.1 (3 dB Overdrive)	17	No Device Degradation

Documentation

Quick reference to our documentation types.

1-5 of 9 documents

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^{Data Sheet}
AFT05MS031NR1, AFT05MS031GNR1 136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet

PDFRev 1Apr 26, 20131.1 MBAFT05MS031NEnglish
^{Application Note}
AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

PDFRev 1Apr 29, 2014112.4 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^{Engineering Bulletin}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

PDFRev DMar 30, 201686.0 KBSOT1731-1English
^{Package Information}
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English
^{Supporting Information}
New Generation of Land Mobile Radio Products

PDFRev 0Jun 15, 2012877.8 KBLANDMOBILE_TRN_SIEnglish
^{White Paper}
Designing with Plastic RF Power Transistors White Paper

PDFRev 2Sep 24, 2015894.1 KBRFPLASTICWPEnglish

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Design Resources

Design Files

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^Models
AFT05MS031N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019226.4 KBAFT05MS031N_MDL_ADS
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^Models
AFT05MS031NR1, AFT05MS031GNR1 S-Parameters

S2PRev 0Jun 13, 201210.6 KBAFT05MS031N_SP
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^Models
AFT05MS031N RF High-Power Model AWR Product Model Design Kit.

ZIPRev 1Feb 8, 2013303.8 KBAFT05MS031N_MDL_AWR
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RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016802 BRF_HIGH_POWER_MODEL_AWR_KIT
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^{Printed Circuit Boards and Schematics}
AFT05MS031N 520 MHz Narrowband PCB DXF file

ZIPRev 1Jun 13, 2012221.2 KBAFT05MS031N_520NB_PCB
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^Calculators
AFT05MS031NR1, AFT05MS031GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jun 13, 201230.6 KBAFT05MS031N_MTTF_CALC
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136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors

Product Details

Features

Key Parametrics

RF Performance Tables

VHF, 136-174 MHz

UHF, 380-520 MHz

520 MHz Narrowband

Ruggedness, 520 MHz

Documentation

Filter by

AFT05MS031NR1, AFT05MS031GNR1 136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet

AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

New Generation of Land Mobile Radio Products

Designing with Plastic RF Power Transistors White Paper

Design Resources

Design Files

Filter by

AFT05MS031N RF High-Power Model ADS Product Model Design Kit

AFT05MS031NR1, AFT05MS031GNR1 S-Parameters

AFT05MS031N RF High-Power Model AWR Product Model Design Kit.

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFT05MS031N 520 MHz Narrowband PCB DXF file

AFT05MS031NR1, AFT05MS031GNR1 RF Power Electromigration MTTF Calculation Program

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