136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor

AFT09MS015N

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Product Details

Features

  • Characterized for Operation from 136 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.
  • Output or Driver Stage VHF Band Mobile Radio
  • Output or Driver Stage UHF Band Mobile Radio
  • Output or Driver Stage for 700-800 MHz Mobile Radio

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    12.5
  • P1dB (Typ) (dBm)
    42
  • P1dB (Typ) (W)
    16
  • Die Technology
    LDMOS

RF Performance Tables

Narrowband Performance

(12.5 Vdc, IDQ = 100 mA, TA = 25°C, CW)

Wideband Performance

(12.5 Vdc, TA = 25°C, CW)

Ruggedness, 870 MHz

1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz UHF broadband reference circuit.

Documentation

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5 documents

Design Resources

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Design Files

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