6 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

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Product Details

Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Integrated stability enhancements
  • Wideband — full power across the band
  • Exceptional thermal performance
  • Extreme ruggedness
  • High linearity for: TETRA, SSB
  • RoHS compliant
  • Output stage VHF band handheld radio
  • Output stage UHF band handheld radio
  • Output stage for 700-800 MHz handheld radio
  • Generic 6 W driver for ISM and broadcast final stage transistors

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    7.5
  • P1dB (Typ) (dBm)
    37.8
  • P1dB (Typ) (W)
    6
  • Die Technology
    LDMOS

RF Performance Tables

Wideband Performance

(In 440-520 MHz reference circuit, 7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
440-520(1,2)0.1616.262.06.5

Narrowband Performance

(7.5 Vdc, IDQ = 100mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
520(3)20.370.86.8

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
520(3) CW > 65:1 at all Phase Angles 21
(3 dB Overdrive)
10.8 No Device Degradation
1. Measured in 440-520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 520 MHz narrowband production test fixture.

Documentation

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Design Resources

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Design Files

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