6 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

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Product Details

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Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Integrated stability enhancements
  • Wideband — full power across the band
  • Exceptional thermal performance
  • Extreme ruggedness
  • High linearity for: TETRA, SSB
  • RoHS compliant
  • Output stage VHF band handheld radio
  • Output stage UHF band handheld radio
  • Output stage for 700-800 MHz handheld radio
  • Generic 6 W driver for ISM and broadcast final stage transistors

RF Performance Tables

Wideband Performance

(In 440-520 MHz reference circuit, 7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
440-520(1,2)0.1616.262.06.5

Narrowband Performance

(7.5 Vdc, IDQ = 100mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
520(3)20.370.86.8

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
520(3) CW > 65:1 at all Phase Angles 21
(3 dB Overdrive)
10.8 No Device Degradation
1. Measured in 440-520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 520 MHz narrowband production test fixture.

Documentation

Quick reference to our documentation types.

5 documents

Design Resources

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Design Files

1-5 of 8 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    AFM906N S-Parameters

  • Models

    AFM906N RF High-Power Model ADS Product Model Design Kit

  • Models

    AFM906N RF High-Power Model AWR Product Model Design Kit

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