764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors

AFT09MS031N

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Product Details

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Features

  • Characterized for Operation from 764 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band (764 to 870 MHz)
  • 225°C Capable Plastic Package
  • Exceptional Thermal Performance
  • High Linearity for: TETRA, SSB, LTE
  • Cost-effective Over-molded Plastic Packaging
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
  • These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • Output Stage 800 MHz Trunking Band Mobile Radio
  • Output Stage 900 MHz Trunking Band Mobile Radio

RF Performance Tables

764-941 MHz Narrowband

13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW

764-870 MHz Broadband

13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW

Ruggedness, 870 MHz

1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz broadband reference circuit.

Documentation

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1-5 of 9 documents

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Design Resources

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Design Files

1-5 of 7 design files

  • Models

    AFT09MS031N RF High-Power Model AWR Product Model Design Kit.

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    AFT09MS031N RF High-Power Model ADS Product Model Design Kit

  • Models

    AFT09MS031NR1, AFT09MS031GNR1 S-Parameters

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