764-941 MHz, 55 W, 12.5 V Broadband RF Power LDMOS Transistors

  • Not Recommended for New Designs
  • \n Contact support,\n your local sales representative or an\n \n NXP Authorized Distributor\n \n for product availability.\n

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Product Details

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  • Characterized for Operation from 764 to 941 MHz
  • Integrated Input Matching Improves Broadband Performance
  • Integrated ESD Protection
  • Broadband — Full Power Across the Band (764-870 MHz)
  • 225°C Capable Plastic Package
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB
  • Cost-effective Over-molded Plastic Packaging
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
  • with assured supply for a minimum of 15 years after launch.
  • Output Stage 800 MHz Band Mobile Radio
  • Output Stage 700 MHz Band Mobile Radio

RF Performance Tables

870 MHz Narrowband

(In NXP Test Circuit: 12.5 Vdc, IDQ(A+B) = 550 mA, TA = 25°C, CW)

800 MHz Broadband Performance

(In NXP Reference Circuit: 12.5 Vdc, IDQ(A+B) = 800 mA, Pin = 1.5 W, TA = 25°C, CW)

Ruggedness, 870 MHz


Quick reference to our documentation types.

4 documents

Design Resources

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Design Files

1-5 of 7 design files

  • Models

    AFT09MP055NR1, AFT09MP055GNR1 S-Parameters

  • Models

    AFT09MP055N RF High-Power Model ADS Product Model Design Kit

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    AFT09MP055N RF High-Power Model AWR Product Model Design Kit

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