8 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

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Product Details

Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Integrated stability enhancements
  • Wideband — full power across the band
  • Exceptional thermal performance
  • Extreme ruggedness
  • High linearity for: TETRA, SSB
  • RoHS compliant
  • Output stage VHF band handheld radio
  • Output stage UHF band handheld radio
  • Output stage for 700-800 MHz handheld radio

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    7.5
  • P1dB (Typ) (dBm)
    39
  • P1dB (Typ) (W)
    8
  • Die Technology
    LDMOS

RF Performance Tables

Wideband Performance

(In 350-520 MHz reference circuit, 7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)(1)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
3500.2515.256.68.4
4350.2515.561.58.9
5200.2515.064.27.9

Narrowband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
520(2)20.773.98.4

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
520(2) CW > 65:1 at all Phase Angles 21
(3 dB Overdrive)
10.8 No Device Degradation
1. Measured in 350-520 MHz UHF broadband reference circuit.
2. Measured in 520 MHz narrowband RF test fixture.

Design Resources

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Design Files

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