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Radio Frequency
RF Power
RF ISM and Broadcast
1-600 MHz – Broadcast and ISM
- MRF085H
- MRF101AN
- MRF1K50H
- MRF1K50N
- MRF300AN
- MRF6V2010N
- MRF6V2150N
- MRF6V2300N
- MRF6V4300N
- MRF6VP11KH
- MRF6VP21KH
- MRF6VP2600H
- MRF6VP3450H
- MRF6VP41KH
- MRFE6P3300H
- MRFE6S9060NR1
- MRFE6VP100H
- MRFE6VP5150N
- MRFE6VP5300N
- MRFE6VP5600H
- MRFE6VP61K25H
- MRFE6VP61K25N
- MRFE6VP6300H
- MRFE6VP6600N
- MRFE6VP8600H
- MRFE6VS25L
- MRFE6VS25N
- MRFE8VP8600H
- MRFX035H
- MRFX1K80H
- MRFX1K80N
- MRFX600H
MRF101AN

MRF101AN: 100 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.

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Features

Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
Included in our product longevity program with assured supply for a minimum of 15 years after launch.
RoHS compliant

Typical Applications

Industrial, scientific, medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies

MoreLess

Features

Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
Included in our product longevity program with assured supply for a minimum of 15 years after launch.
RoHS compliant

Typical Applications

Industrial, scientific, medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies

Data Sheets

Application Notes

Buy

TO-220-3: MRF101AN and MRF101BN

MRF101AN Reference Circuits

Standard Packages for RF Power

TO-220-3: MRF101AN and MRF101BN
MRF101AN Reference Circuits
Standard Packages for RF Power

TO-220-3: MRF101AN and MRF101BN

MRF101AN Reference Circuits

Standard Packages for RF Power

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Key Parametrics

Frequency (Min) (MHz)

1.8
Frequency (Max) (MHz)

250
Supply Voltage (Typ) (V)

50
P1dB (Typ) (dBm)

50
P1dB (Typ) (W)

100
Test Signal

Pulse
Power Gain (Typ) (dB) @ f (MHz)

21.1 @ 230
Efficiency (Typ) (%)

76.7
Thermal Resistance (Spec) (℃/W)

1.1
Matching

unmatched
Class

AB
Die Technology

LDMOS

Development Boards and Designs

MRF101AN Reference Circuits

Evaluation and Development Boards

MRF101AN RF Essentials Kit

Evaluation and Development Boards

Development Boards and Designs

MRF101AN Reference Circuits

Evaluation and Development Boards

MRF101AN RF Essentials Kit

Evaluation and Development Boards

RF Performance Tables

Typical Performance

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	P_out (W)	G_ps (dB)	η_D (%)	Reference Circuit Part Number	Detailed Data
13.56	CW	130 CW	27.1	79.6	MRF101AN-13MHZ	Tool Summary Page
27	CW	125 CW	24.9	79.6	MRF101AN-27MHZ
40.68	CW	120 CW	23.8	81.5	MRF101AN-40MHZ
50	CW	119 CW	22.8	82.1	MRF101AN-50MHZ
81.36	CW	130 CW	23.2	80.8	MRF101AN-81MHZ
87.5-108	CW	115 CW	20.6	76.8	MRF101AN-88MHZ
136-174	CW	104 CW	21.2	76.5	MRF101AN-VHF
230	Pulse (100 µsec, 20% Duty Cycle)	115 Peak	21.1	76.7	MRF101AN-230MHZ

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_in (dBm)	Test Voltage	Result
40.68	CW	> 65:1 at all Phase Angles	0.64 CW	50	No Device Degradation
230	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	1.8 Peak (3 dB Overdrive)	50	No Device Degradation