NXP has been a leader in radio frequency innovation and technology for more than 60 years, offering an extensive portfolio of RF solutions for cellular infrastructure and consumer and industrial applications, ranging from milliwatts to kilowatts with GaN on SiC, LDMOS and SiGe technology offerings.
End-to-end solutions for diverse networks and architectures offering full lineups of GaN, LDMOS and SiGe discrete transistors, ICs and multi-chip modules. These solutions include all sub-6 GHz and mmWave frequency bands, supporting all cellular standards.
High power Airfast discrete solutions designed for 20 to 80 W radios.
Multi-chip modules, ICs, LNAs and discrete mMIMO solutions for 5 to 10 W radios and macro drivers.
High-performance analog beamforming ICs in key 5G mmWave bands.
NXP’s 2nd generation RapidRF front-end boards are designed to reduce overall complexity and provide a complete ready-to-use circuit for TDD cellular applications.
Front-end ICs for 2.4 GHz, 5 GHz and 7 GHz Wi-Fi® and Bluetooth®. Learn more about WLAN front-end ICs.
High power GaN and LDMOS technologies suited for applications under demanding conditions.
Power transistors designed to simplify the use of solid-state RF in high-powered applications.
Designed for 2-way hand-held and vehicle radios, offering broadband performance.
BTS7202 Rx front-end modules and BTS6305U/BTS6403U pre-drivers offer higher output power, improved linearity and reduced noise figure to support better 5G signal quality.
Access our comprehensive library of more than 400 RF power amplifier designs.
Use our interactive product guide to browse our macro, mMIMO and consumer and industrial portfolios.
Learn how NXP is optimizing GaN technology to enable 5G solutions.