MRF1K50N: 1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

Features

OM-1230-4L, OM-1230G-4L Package Image

OM-1230-4L, OM-1230G-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    500
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61.8
  • P1dB (Typ) (W)
    1500
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1500.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    23.4 @ 230.0
  • Efficiency (Typ) (%)
    75.1
  • Thermal Resistance (Spec) (°C/W)
    0.068
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
87.5-108(1,2)CW1421 CW23.183.2
230(3,4)Pulse
(100 µsec, 20% Duty Cycle)
1500 Peak23.475.1

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
230(3) Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles 15 Peak
(3 dB Overdrive)
50 No Device Degradation
1. Data from 87.5-108 MHz wideband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Data from 230 MHz narrowband production test fixture.
4. All data measured in fixture with device soldered to heatsink.