MRFX1K80H: 1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor updated

Overview

Features

MRFX1K80H: Reference Circuits

MRFX1K80H: Reference Circuits

MRFX1K80H pin compatibility with previous generation parts

MRFX1K80H pin compatibility with previous generation parts

NI-1230H-4S Package Image

NI-1230H-4S Package Image

The Five Benefits of NXP 65 V LDMOS

Video

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    400
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    62.6
  • P1dB (Typ) (W)
    1800
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    25.1 @ 230.0
  • Efficiency (Typ) (%)
    75.1
  • Thermal Resistance (Spec) (°C/W)
    0.09
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
27 (1)CW651800 CW27.875.6
64Pulse (100 µsec, 10% Duty Cycle)651800 Peak27.169.5
81.36CW631700 CW24.576.3
87.5-108 (2,3)CW601600 CW23.682.5
123/128Pulse (100 µsec, 10% Duty Cycle)651800 Peak25.969.0
144CW651800 CW23.578.0
230 (4)Pulse (100 µsec, 20% Duty Cycle)651800 Peak25.175.1
325Pulse (12 µsec, 10% Duty Cycle)631700 Peak22.864.9

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test Voltage Result
230 (4) Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles 14 W Peak
(3 dB Overdrive)
65 No Device Degradation
1. Data from 27 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.