MRF7S24250N: 250 W CW over 2400-2500 MHz, 32 V RF Power LDMOS Transistor

Overview

Features

2400-2500 MHz Reference Circuit

2400-2500 MHz Reference Circuit

OM-780-2L Package Image

OM-780-2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2400
  • Frequency (Max) (MHz)
    2500
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    54
  • P1dB (Typ) (W)
    250
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    250.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    14.7 @ 2450.0
  • Efficiency (Typ) (%)
    54.8
  • Thermal Resistance (Spec) (°C/W)
    0.26
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 2400–2500 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)
Signal Type Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
2400CW9.014.555.5255
24509.014.754.8263
25009.014.355.5242

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450CW> 10:1
at all Phase Angles
14
(3 dB Overdrive)
32No Device
Degradation

Read More

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  • RF Power Tool: Your bench-in-a-box for solid-state RF evaluation and prototyping.