MMRF5014H: 1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor

Overview

Features

NI-360H-2SB Package Image

NI-360H-2SB Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1
  • Frequency (Max) (MHz)
    2700
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    51
  • P1dB (Typ) (W)
    125
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    125.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    16.0 @ 2500
  • Efficiency (Typ) (%)
    64.2
  • Thermal Resistance (Spec) (℃/W)
    0.86
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    GaN
.

RF Performance Tables

Typical Narrowband Performance

VDD = 50 Vdc, IDQ = 350 mA, TA = 25°C

Typical Wideband Performance

VDD = 50 Vdc, TA = 25°C

Load Mismatch/Ruggedness

1. Measured in 2500 MHz narrowband test circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 200-2500 MHz broadband reference circuit.
4. Measured in 1300-1900 MHz broadband reference circuit.