100 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF101AN

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Product Details

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Features

  • Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
  • Characterized from 30 to 50 V
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI and other medical applications
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • HF and VHF communications
  • Switch mode power supplies

Part numbers include: MRF101AN, MRF101AN-2MHZ4UP, MRF101BN.

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
Reference Circuit
Part Number
Detailed Data
13.56CW130 CW27.179.6MRF101AN-13MHZTool Summary Page
27CW125 CW24.979.6MRF101AN-27MHZ
40.68CW120 CW23.881.5MRF101AN-40MHZ
50CW119 CW22.882.1MRF101AN-50MHZ
81.36CW130 CW23.280.8MRF101AN-81MHZ
87.5-108CW115 CW20.676.8MRF101AN-88MHZ
136-174CW104 CW21.276.5MRF101AN-VHF
230Pulse
(100 µsec, 20% Duty Cycle)
115 Peak21.176.7MRF101AN-230MHZ

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
40.68CW> 65:1
at all Phase Angles
0.64 CW50No Device Degradation
230Pulse
(100 µsec, 20% Duty Cycle)
> 65:1
at all Phase Angles
1.8 Peak
(3 dB Overdrive)
50No Device Degradation

Documentation

Quick reference to our documentation types.

4 documents

Design Resources

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Design Files

3 design files

Hardware

1 hardware offering

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