MRF101AN: 100 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

Features

TO-220-3L: MRF101AN and MRF101BN

TO-220-3L: MRF101AN and MRF101BN

MRF101AN Reference Circuits

MRF101AN Reference Circuits

Standard Packages for RF Power

Standard Packages for RF Power thumbnail

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    250
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    50
  • P1dB (Typ) (W)
    100
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    21.1 @ 230
  • Efficiency (Typ) (%)
    76.7
  • Thermal Resistance (Spec) (℃/W)
    1.1
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
13.56CW130 CW27.179.6
27CW130 CW24.081.5
40.68 (1)CW120 CW23.881.5
50CW115 CW23.079.5
81.36CW130 CW23.280.8
87.5-108CW110 CW21.377.1
136-174 (2,3)CW104 CW21.276.5
230 (4)Pulse
(100 µsec, 20% Duty Cycle)
115 Peak21.176.7

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
40.68CW> 65:1
at all Phase Angles
0.64 Peak
(3 dB Overdrive)
50No Device Degradation
230Pulse
(100 µsec, 20% Duty Cycle)
> 65:1
at all Phase Angles
1.8 Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 40.68 MHz reference circuit.
2. Measured in 136-174 MHz VHF broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Measured in 230 MHz fixture.