RF
RF Power
RF ISM and Broadcast
1-600 MHz – Broadcast and ISM
- MRF085H
- MRF101AN
- MRF1K50H
- MRF1K50N
- MRF300AN
- MRF6V2010N
- MRF6V2150N
- MRF6V2300N
- MRF6V4300N
- MRF6VP11KH
- MRF6VP21KH
- MRF6VP2600H
- MRF6VP3450H
- MRF6VP41KH
- MRFE6P3300H
- MRFE6S9060NR1
- MRFE6VP100H
- MRFE6VP5150N
- MRFE6VP5300N
- MRFE6VP5600H
- MRFE6VP61K25H
- MRFE6VP61K25N
- MRFE6VP6300H
- MRFE6VP6600N
- MRFE6VP8600H
- MRFE6VS25L
- MRFE6VS25N
- MRFE8VP8600H
- MRFX035H
- MRFX1K80H
- MRFX1K80N
- MRFX600H
MRFX1K80H

MRFX1K80H: 1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

Overview

The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.

The MRFX1K80H is pin-compatible (same PCB) with its plastic version MRFX1K80N, with MRFE6VP61K25H and MRFE6VP61K25N (1250 W @ 50 V), and with MRF1K50H and MRF1K50N (1500 W @ 50 V).

For additional information contact NXP Semiconductor.

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Features

Based on new 65 V LDMOS technology, designed for ease of use
Characterized from 30 to 65 V for extended power range
Unmatched input and output
High breakdown voltage for enhanced reliability and higher efficiency architectures
High drain-source avalanche energy absorption capability
High ruggedness. Handles 65:1 VSWR.
RoHS compliant
Lower thermal resistance option in over-molded plastic package: MRFX1K80N
Included in our product longevity program with assured supply for a minimum of 15 years after launch

Typical Applications

Industrial, scientific, medical (ISM)
- Laser generation
- Plasma generation
- Particle accelerators
- MRI, RF ablation and skin treatment
- Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
- HF communications
- Radar

MoreLess

Features

Based on new 65 V LDMOS technology, designed for ease of use
Characterized from 30 to 65 V for extended power range
Unmatched input and output
High breakdown voltage for enhanced reliability and higher efficiency architectures
High drain-source avalanche energy absorption capability
High ruggedness. Handles 65:1 VSWR.
RoHS compliant
Lower thermal resistance option in over-molded plastic package: MRFX1K80N
Included in our product longevity program with assured supply for a minimum of 15 years after launch

Typical Applications

Industrial, scientific, medical (ISM)
- Laser generation
- Plasma generation
- Particle accelerators
- MRI, RF ablation and skin treatment
- Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
- HF communications
- Radar

Data Sheets

Application Notes

Buy

MRFX1K80H: Reference Circuits

MRFX1K80H pin compatibility with previous generation parts

NI-1230H-4S

The Five Benefits of NXP 65 V LDMOS

NXP 65 V LDMOS Design Reuse

MRFX1K80H: Reference Circuits
MRFX1K80H pin compatibility with previous generation parts
NI-1230H-4S
The Five Benefits of NXP 65 V LDMOS
NXP 65 V LDMOS Design Reuse

MRFX1K80H: Reference Circuits

MRFX1K80H pin compatibility with previous generation parts

NI-1230H-4S

The Five Benefits of NXP 65 V LDMOS

NXP 65 V LDMOS Design Reuse

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Key Parametrics

Frequency (Min) (MHz)

1.8
Frequency (Max) (MHz)

400
Supply Voltage (Typ) (V)

65
P1dB (Typ) (dBm)

62.6
P1dB (Typ) (W)

1800
Test Signal

Pulse
Power Gain (Typ) (dB) @ f (MHz)

25.1 @ 230
Efficiency (Typ) (%)

75.1
Thermal Resistance (Spec) (℃/W)

0.09
Matching

unmatched
Class

AB
Die Technology

LDMOS

RF Performance Tables

Typical Performance

Frequency (MHz)	Signal Type	V_DD (V)	P_out (W)	G_ps (dB)	η_D (%)
27⁽¹⁾	CW	65	1800 CW	27.8	75.6
64	Pulse (100 µsec, 10% Duty Cycle)	65	1800 Peak	27.1	69.5
81.36	CW	62	1800 CW	25.1	78.7
87.5-108^(2,3)	CW	60	1600 CW	23.6	82.5
123/128	Pulse (100 µsec, 10% Duty Cycle)	65	1800 Peak	25.9	69.0
144	CW	65	1800 CW	23.5	78.0
175	CW	60	1560 CW	23.5	75.9
174-230 Doherty⁽³⁾	DVB-T (8k OFDM)	63	250 Avg.	21.3	43.3
230⁽⁴⁾	Pulse (100 µsec, 20% Duty Cycle)	65	1800 Peak	25.1	75.1
325	Pulse (12 µsec, 10% Duty Cycle)	63	1700 Peak	22.8	64.9

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_in (W)	Test Voltage	Result
230⁽⁴⁾	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	14 W Peak (3 dB Overdrive)	65	No Device Degradation

1. Data from 27 MHz reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz production test fixture.