MRFX1K80H: 1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor
MRFX1K80H: Reference Circuits
MRFX1K80H pin compatibility with previous generation parts
NI-1230H-4S
The Five Benefits of NXP 65 V LDMOS
NXP 65 V LDMOS Design Reuse
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MRFX1K80H: Reference Circuits
-
MRFX1K80H pin compatibility with previous generation parts
-
NI-1230H-4S
-
The Five Benefits of NXP 65 V LDMOS -
NXP 65 V LDMOS Design Reuse
MRFX1K80H: Reference Circuits
MRFX1K80H pin compatibility with previous generation parts
NI-1230H-4S Package Image
Key Parametrics
-
- Frequency (Min) (MHz)
- 1.8
-
- Frequency (Max) (MHz)
- 400
-
- Supply Voltage (Typ) (V)
- 65
-
- P1dB (Typ) (dBm)
- 62.6
-
- P1dB (Typ) (W)
- 1800
-
- Test Signal
- Pulse
-
- Power Gain (Typ) (dB) @ f (MHz)
- 25.1 @ 230
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- Efficiency (Typ) (%)
- 75.1
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- Thermal Resistance (Spec) (℃/W)
- 0.09
-
- Matching
- unmatched
-
- Class
- AB
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- Die Technology
- LDMOS
.
RF Performance Tables
Typical Performance
| Frequency (MHz) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
Reference Circuit Part Number |
| 27 | CW | 65 | 1800 CW | 27.8 | 75.6 | MRFX1K80H-27MHZ |
| 64 | Pulse (100 µsec, 10% Duty Cycle) | 65 | 1800 Peak | 27.1 | 69.5 | MRFX1K80H-64MHZ |
| 81.36 | CW | 62 | 1800 CW | 25.1 | 78.7 | MRFX1K80H-81MHZ |
| 87.5-108 | CW | 60 | 1600 CW | 23.6 | 82.5 | MRFX1K80H-88MHZ |
| 123/128 | Pulse (100 µsec, 10% Duty Cycle) | 65 | 1800 Peak | 25.9 | 69.0 | MRFX1K80H-128MHZ |
| 175 | CW | 60 | 1560 CW | 23.5 | 75.9 | MRFX1K80H-175MHZ |
| 174-230 Doherty | DVB-T (8k OFDM) | 63 | 250 Avg. | 21.3 | 43.3 | MRFX1K80H-VHFDHY |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | 65 | 1800 Peak | 25.1 | 75.1 | MRFX1K80H-230MHZ |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage | Result |
| 230 | Pulse (100 µsec, 20% Duty Cycle) |
> 65:1 at all Phase Angles | 14 W Peak (3 dB Overdrive) |
65 | No Device Degradation |