MRFX1K80H: 1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

Overview

Features

MRFX1K80H: Reference Circuits

MRFX1K80H: Reference Circuits

MRFX1K80H pin compatibility with previous generation parts

MRFX1K80H pin compatibility with previous generation parts

NI-1230H-4S

NI-1230H-4S

The Five Benefits of NXP 65 V LDMOS

The Five Benefits of NXP 65 V LDMOS thumbnail

NXP 65 V LDMOS Design Reuse

NXP 65 V LDMOS Design Reuse thumbnail

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    400
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    62.6
  • P1dB (Typ) (W)
    1800
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    25.1 @ 230
  • Efficiency (Typ) (%)
    75.1
  • Thermal Resistance (Spec) (℃/W)
    0.09
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
Reference Circuit
Part Number
27 CW 65 1800 CW 27.8 75.6 MRFX1K80H-27MHZ
64 Pulse (100 µsec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5 MRFX1K80H-64MHZ
81.36 CW 62 1800 CW 25.1 78.7 MRFX1K80H-81MHZ
87.5-108 CW 60 1600 CW 23.6 82.5 MRFX1K80H-88MHZ
123/128 Pulse (100 µsec, 10% Duty Cycle) 65 1800 Peak 25.9 69.0 MRFX1K80H-128MHZ
175 CW 60 1560 CW 23.5 75.9 MRFX1K80H-175MHZ
174-230 DohertyDVB-T (8k OFDM) 63 250 Avg. 21.3 43.3 MRFX1K80H-VHFDHY
230Pulse (100 µsec, 20% Duty Cycle) 65 1800 Peak 25.1 75.1 MRFX1K80H-230MHZ

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test Voltage Result
230 Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles 14 W Peak
(3 dB Overdrive)
65 No Device Degradation