MRF6VP2600H: 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET

Overview

Features

NI-1230 Package Image

NI-1230 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2
  • Frequency (Max) (MHz)
    500
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    57.8
  • P1dB (Typ) (W)
    600
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    125.0 @ AVG
  • Test Signal
    OFDM
  • Power Gain (Typ) (dB) @ f (MHz)
    25.0 @ 225
  • Efficiency (Typ) (%)
    28.5
  • Thermal Resistance (Spec) (℃/W)
    0.2
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS