MRFX035H: 35 W CW over 1.8-512 MHz, 65 V Wideband RF Power LDMOS Transistor

Overview

Features

NI-360H-2SB

NI-360H-2SB

The Five Benefits of NXP 65 V LDMOS

The Five Benefits of NXP 65 V LDMOS thumbnail

NXP 65 V LDMOS Design Reuse

NXP 65 V LDMOS Design Reuse thumbnail

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    512
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    45.4
  • P1dB (Typ) (W)
    35
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    24.8 @ 230
  • Efficiency (Typ) (%)
    75.8
  • Thermal Resistance (Spec) (℃/W)
    1.3
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

VDD = 65 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1.8-54 (1,2)CW32 CW24.158.1
30-512 (2)CW26 CW15.142.3
230 (3)CW35 CW24.875.8

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
230 (3)CW> 65:1
at all Phase Angles
23.5
(3 dB Overdrive)
65No Device Degradation
1. Measured in 1.8-54 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.