MRF13750H: 750 W CW over 700-1300 MHz, 50 V RF Power LDMOS Transistor

Overview

Features

MRF13750H 915 MHz Reference Circuit

 MRF13750H 915 MHz Reference Circuit

NI-1230H-4S, NI-1230S-4S

NI-1230H-4S, NI-1230S-4S

MRF13750H - Offering High Power Solid-State RF Energy

MRF13750H - Offering High Power Solid-State RF Energy thumbnail

Key Parametrics

  • Frequency (Min) (MHz)
    700
  • Frequency (Max) (MHz)
    1300
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    58.8
  • P1dB (Typ) (W)
    750
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    20.5 @ 915
  • Efficiency (Typ) (%)
    69.2
  • Thermal Resistance (Spec) (℃/W)
    0.15
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
915 (1)CW75019.367.1
915 (2)Pulse
(100 µsec, 10% Duty Cycle)
85020.569.2
1300 (3)CW70017.256.0

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
915 (2) Pulse
(100 µsec, 10% Duty Cycle)
> 10:1 at all Phase Angles 15.9 Peak
(3 dB Overdrive)
50 No Device Degradation
1. Measured in 915 MHz narrowband reference circuit.
2. Measured in 915 MHz narrowband production test fixture.
3. Measured in 1300 MHz narrowband reference circuit.