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Version 5.9 of the SiMKit library is now available. On this website, previous versions can be found as well. The main developments of this release are:
Read more about SiMKit 5.9
|Advanced Diode model
|Our Advanced Diode model is an extension to normal diode models to include a much better description of especially the reverse behavior.
|Independent dual-gate JFET. Refer to https://nanohub.org/publications/173/2 for more information.
|The JUNCAP model describes the behavior of the diodes that are formed by the source, drain, or well-to-bulk junctions in MOST devices. In order to include the effects of differences in the sidewall, bottom, and gate-edge-junction profiles, these three contributions are calculated separately in the JUNCAP model.
|The Mextram model gives a description of vertical bipolar transistors in all kinds of processes, amongst which are modern SiGe processes and robust HV processes. It is very efficient in modeling the lowly doped collector epilayer of a bipolar transistor where effects like velocity saturation, base widening, Kirk effect, and impact ionization play a role.
|MOS Model 11 (MM11) is a symmetrical, surface-potential-based model, giving an accurate physical description of the transition from weak to strong inversion.
|MOS Model 20 is an old compact LDMOS model, which combines the MOSFET operation of the channel region with that of the drift region under the thin gate oxide. As such, it was aimed as a successor of MOS model 9 in series with MOS model 31 or MOS model 11 in series with MOS model 31.
|MOS Model 31 is a physics-based transistor model to be used in circuit simulation and IC-design of analog high-voltage applications. The model describes the electrical behavior of a junction-isolated accumulation/depletion-type MOSFET.
|MOS Model 40 is a physics-based transistor model to be used in circuit simulation and IC-design of analog high-voltage applications processed in Silicon-on-Insulator (SOI).
|MOS Model 9 is a physics-based analytical model for electrical circuit simulation and design for analog applications. It provides a description of the electrical characteristics in all relevant regions of transistor operation such as the sub-threshold current, the substrate current and the output conductance.
|Until and including 2011, the PSP model has been developed jointly by NXP (formerly part of Philips) and the group of Prof. Gildenblat at Arizona State University (formerly at Penn State University). From 2011 to 2014, the model has been further developed jointly by NXP and Delft University of Technology.
|In the design of bipolar analog integrated circuits, greater flexibility is often achieved when both NPN and PNP transistors are incorporated in the circuit design. Many present-day bipolar production processes use the conventional lateral PNP as the standard PNP transistor structures.