This second gen automotive grade IGBT- EV power inverter control platform (ICP2.0) system solution based on GD3160 gate driver IC offers both hardware and software enablement
for electric vehicle traction inverters application targeting ISO 26262 ASIL C/D using IGBT power modules.
EV-INVERTERHDBT platform provides a comprehensive foundation that has been validated and dyno tested for developing an IGBT inverter control system solution. Refer to the
EV-INVERTERHD platform with GD3160 for controlling silicon carbide (SiC) MOSFETs.
The choice of tools and services available are:
ICP2.0 system design IP targeting ASIL C/D is compatible to drive an IGBT or SiC MOSFETs based inverter power module. The system IP includes hardware schematics and enablement
software for EV inverter control applications that can be readily adapted to a variety of power module physical form factors.
EV-INVERTERHDBT enablement kit consists of Gerber files and PCB layout that are engineered specifically to drive IGBTs packaged in industry standard P6 module footprint such as the onsemi VE-Trac™ and Infineon HybridPACK™ for ease of evaluation.
- ICP2.0 system IP reduces system BOM count by using a SW resolver embedded in the MCU eliminating the need for HW resolver
- ICP2.0 system level functional safety whitepaper, devices FMEDAs and safety runtime framework are part of the enablement kit for customers targeting ASIL C/D EV-Inverter
implementation. Functional safety consultation and safety software are optional add-on services available with the platform.
External components such as the IGBT module, link capacitor, bus bar and cooling plate are not included and must be provided by the customer.
ICP2.0 is empowered by NXP's comprehensive automotive portfolio of world-class automotive MCUs, CAN PHY and Ethernet interfaces, safety system basis chips (SBC) and high-voltage
isolated IGBT/SiC gate driver IC devices.