869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Products
No Longer Manufactured
MRF5S9101M

Roll over image to zoom in

Replaced by MRF5S9101NR1(NBR1). There are no form, fit or function changes with this part replacement.

The MRF5S9101MR1 and MRF5S9101MBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

Data Sheet

Documentation

Quick reference to our documentation types.

1 documents

^{Data Sheet}
MRF5S9101MR1, MRF5S9101MBR1 869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

PDFRev 3May 26, 2006555.6 KBMRF5S9101English

869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Documentation

Filter by

MRF5S9101MR1, MRF5S9101MBR1 869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Support

What do you need help with?

Suggested Links