Radio Frequency

LDMOS, GaN, SiGe and GaAs RF power transistors and ICs ranging from 1.8 mW to 1.8 kW and from DC to 47 GHz. RF power solutions designed for communication and industrial applications.

NXP enables the next step in Wi-Fi 6 by providing a high performance WLAN11ax portfolio to support our customers in fulfilling the ever-increasing need for more bandwidth.

We are a leading supplier of low and medium power RF amplifiers with a strong legacy in wireless and cellular markets and eMetering and CATV applications.

Our highly integrated radar MCUs and radar transceiver technologies (RFCMOS or BiCMOS) offer customers scalable system solutions that address ultra-short range, short-range, mid-range and long-range radar.

Our portfolio of low-power, cost-effective wireless solutions for embedded devices address many monitoring and control applications for the Internet of Things—including consumer, smart energy, industrial, and healthcare.

Advanced Doherty alignment module (ADAM) is an innovative class of highly integrated GaAs MMIC control circuits designed specifically to optimize the performance of today’s Doherty amplifiers.

TX/RX ICs include transmitter IQ modulators, fractional-N PLL based transmitters and highly integrated single-chip sub-1 GHz RF transceivers.

TX/RX discrete components include bipolar RF power transistors, JFETs for switching and general RF applications, and MOSFETs for switching and general RF applications.

RF mixers includes a choice of devices both with and without an integrated local oscillator (LO). Other options include fully integrated (PLL synthesizer/mixer/IF gain block) and RF tested, resulting in significantly decreased manufacturing time.

Products include low IF alignment free analog car radio tuner ICs and car radio tuner front-end for digital-IF reception, covering a majority of communication and transmissions systems.