NXP has been a leader in radio frequency innovation and technology for more than 60 years, offering an extensive portfolio of RF solutions for cellular infrastructure and consumer and industrial applications, ranging from milliwatts to kilowatts with GaN on SiC, LDMOS and SiGe technology offerings.
End-to-end solutions for diverse networks and architectures offering full lineups of GaN, LDMOS and SiGe discrete transistors, ICs and multi-chip modules. These solutions include all sub-6 GHz and mmWave frequency bands, supporting all cellular standards.
High power Airfast discrete solutions designed for 20 to 80 W radios.
Multi-chip modules, ICs, LNAs and discrete mMIMO solutions for 5 to 10 W radios and macro drivers.
High-performance analog beamforming ICs in key 5G mmWave bands.
Electronic Products includes NXP’s family of top-side cooled RF amplifier modules in its top ten 5G chips and modules for 2023.
Front-end ICs for 2.4 GHz, 5 GHz and 7 GHz Wi-Fi® and Bluetooth®. Learn more about WLAN front-end ICs.
High power GaN and LDMOS technologies suited for applications under demanding conditions.
Power transistors designed to simplify the use of solid-state RF in high-powered applications.
Designed for 2-way hand-held and vehicle radios, offering broadband performance.
NXP’s top-side cooling technology helps radio designers create thinner, lighter 5G radio units while reducing design and manufacturing complexities.
Development Board
Access our comprehensive library of more than 400 RF power amplifier designs.
Use our interactive product guide to browse our macro, mMIMO and consumer and industrial portfolios.
Learn how NXP is optimizing GaN technology to enable 5G solutions.