SOT1732-1: PDIP3


Overview

PDIP3, plastic shrink dual in-line package; 3 leads; 9.65 mm x 6.1 mm x 2.03 mm body
Package Version Package Name Mount Terminal Position Package Style Dimensions Termination Count Material
PDIP3 surface mount triple DIP 9.65 x 6.1 x 2.03 3 plastic
Manufacture Code Reference Codes Issue Date
98ASH98117A 2017-03-24
Part Description Quick access
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V
70W RF POWER FET TO270
Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V
Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V
Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V
Lateral N-Channel Broadband RF Power MOSFET, 945 MHz, 45 W, 28 V
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
Broadband RF Power LDMOS Transistor, 500-1000 MHz, 60 W CW, 28 V
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
Lateral N-Channel Broadband RF Power MOSFET, 945 MHz, 60 W, 26 V
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V
Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
30W RF PWR FET TO-270N