Compact List
- No Longer Manufactured
- MMRF1316N
1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
This high ruggedness device, MMRF1316NR1, is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design allowing wide frequency range utilization, between 1.8 and 600 MHz.
RF_ISO_TO_270WB_4 graphic image
Product Details
Features
- Wide Operating Frequency Range
- Ruggedness
- Input and Output Allowing Wide Frequency Range Utilization
- Integrated Stability Enhancements
- Low Thermal Resistance
- Integrated ESD Protection Circuitry
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
RF Performance Tables
87.5-108 MHz Broadband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 87.5-108(1,3) | CW | 361 | 23.8 | 80.1 |
230 MHz Narrowband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 230(2) | CW | 300 | 25.0 | 70.0 |
| 230(2) | Pulse (100 µsec, 20% Duty Cycle) | 300 Peak | 27.0 | 71.0 |
Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 98(1) | CW | > 65:1 at all Phase Angles | 3 (3 dB Overdrive) | 50 | No Device Degradation |
| 230(2) | Pulse (100 µsec, 20% Duty Cycle) | 1.16 Peak (3 dB Overdrive) |
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.