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1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers

MW7IC18100N

No Longer Manufactured

This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The MW7IC18100NR1, MW7IC18100GNR1 and MW7IC18100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 2050 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats including GSM EDGE and CDMA.

Data Sheet

Application Notes

Documentation

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9 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

PDFJun 7, 2006Rev 0
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

MW7IC18100NR1, MW7IC18100GNR1, MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers[MW7IC18100N]

PDFMar 24, 2009Rev 3

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

PDFMar 18, 2016Rev B
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

PDFFeb 26, 2016Rev B
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

PDFFeb 26, 2016Rev B

Design Resources

Design Files

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1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers

Documentation

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Application Note (5)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MW7IC18100NR1, MW7IC18100GNR1, MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers[MW7IC18100N]

Package Information (3)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

MW7IC18100NR1, MW7IC18100GNR1, MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins

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Design Files

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