2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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No Longer Manufactured
MD7IC21100N

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The MD7IC21100NR1, MD7IC21100GNR1 and MD7IC21100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110 to 2170 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD-SCDMA.

Data Sheet

Application Notes

Documentation

Quick reference to our documentation types.

1-5 of 9 documents

^{Data Sheet}
MD7IC21100NR1, MD7IC21100GNR1, MD7IC21100NBR1 2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

PDFRev 2Feb 9, 20121.1 MBMD7IC21100NEnglish
^{Application Note}
AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

PDFRev 1Apr 29, 2014112.4 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Application Note}
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Jun 7, 20068.3 MBAN3263English
^{Application Note}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
^{Application Note}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
^{Package Information}
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins

PDFRev BMar 18, 201672.7 KBSOT1720-2English
^{Package Information}
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins

PDFRev BFeb 26, 201671.4 KBSOT1721-1English
^{Package Information}
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins

PDFRev BFeb 26, 201677.4 KBSOT1720-3English

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Design Resources

Design Files

4 design files

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT

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^Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT

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^Models
MD7IC21100N, MD7IC21100NB RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:00746.7 KBMD7IC21100N_MDL_AWR

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^Calculators
MD7IC21100NR1, MD7IC21100NBR1, MD7IC21100GNR1 RF Power Electromigration MTTF Calculation Program

XLSRev 0Nov 11, 2008 00:00:0035.3 KBMD7IC21100N_MTTF_CALC

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2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Documentation

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MD7IC21100NR1, MD7IC21100GNR1, MD7IC21100NBR1 2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MD7IC21100N, MD7IC21100NB RF High-Power Model AWR Product Model Design Kit

MD7IC21100NR1, MD7IC21100NBR1, MD7IC21100GNR1 RF Power Electromigration MTTF Calculation Program

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