MMRF1013H: 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs ARCHIVED

Overview

Features

NI-1230H-4S, NI-1230S-4S Package Image

NI-1230H-4S, NI-1230S-4S Package Image
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RF Performance Table

Typical Pulse Performance

Typical Pulse Performance: VDD = 30 Vdc, IDQ = 100 mA
  • Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)