400-1400 MHz, 37.5 dB, 22.8 dBm E-pHEMT LNA

MML09212H No Longer Manufactured
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MML09212HT1 is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front-end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W-CDMA and LTE.

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Product Details

Features

  • Low noise figure: 0.52 dB @ 900 MHz
  • Frequency: 400-1400 MHz
  • Unconditionally stable over temperature
  • High reverse isolation: –58 dB @ 900 MHz
  • P1dB: 22.8 dBm @ 900 MHz
  • Small-signal gain: 37.5 dB @ 900 MHz
  • Third order output intercept point: 37.5 dBm @ 900 MHz
  • Active bias control (on-chip)
  • Single 5 V supply
  • Supply current: 150 mA
  • 50 Ohm operation (some external matching required)
  • Cost-effective 12-pin, 3 mm QFN surface mount plastic package
  • RoHS compliant

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5 design files

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