400-1400 MHz, 37.5 dB, 22.8 dBm E-pHEMT LNA

MML09212H No Longer Manufactured
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MML09212HT1 is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front-end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W-CDMA and LTE.

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Product Details

Features

  • Low noise figure: 0.52 dB @ 900 MHz
  • Frequency: 400-1400 MHz
  • Unconditionally stable over temperature
  • High reverse isolation: –58 dB @ 900 MHz
  • P1dB: 22.8 dBm @ 900 MHz
  • Small-signal gain: 37.5 dB @ 900 MHz
  • Third order output intercept point: 37.5 dBm @ 900 MHz
  • Active bias control (on-chip)
  • Single 5 V supply
  • Supply current: 150 mA
  • 50 Ohm operation (some external matching required)
  • Cost-effective 12-pin, 3 mm QFN surface mount plastic package
  • RoHS compliant
N true 0 PSPMML09212Hen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Supporting Information Supporting Information t531 1 en_US en_US en Data Sheet Data Sheet 1 1 3 English The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. 1349114847523705950195 PSP 720.4 KB None None documents None 1349114847523705950195 /docs/en/data-sheet/MML09212H.pdf 720392 /docs/en/data-sheet/MML09212H.pdf MML09212H documents N N 2018-01-31 Archived - MML09212H 400-1400 MHz, 22.8 P1dB LNA Data Sheet /docs/en/data-sheet/MML09212H.pdf /docs/en/data-sheet/MML09212H.pdf Data Sheet N 980000996212993340 2024-08-22 pdf N en Jan 30, 2018 980000996212993340 Data Sheet Y N Archived - MML09212H 400-1400 MHz, 22.8 P1dB LNA Data Sheet Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note Package Information Package Information 1 3 A English 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) 1286376681419738938713 PSP 279.5 KB None None documents None 1286376681419738938713 /docs/en/package-information/98ASA00227D.pdf 279543 /docs/en/package-information/98ASA00227D.pdf SOT1677-1 documents N N 2017-12-21 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) /docs/en/package-information/98ASA00227D.pdf /docs/en/package-information/98ASA00227D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Nov 30, 2017 302435339416912908 Package Information D N 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) Supporting Information Supporting Information 1 4 1 English Two-stage LNAs support multiple protocols for wireless base stations 1349153188079702993205 PSP 2.6 MB None None documents None 1349153188079702993205 /docs/en/supporting-information/RFLNA_TRN_SI.pdf 2593337 /docs/en/supporting-information/RFLNA_TRN_SI.pdf RFLNA_TRN_SI documents N N 2012-10-09 GaAs MMIC Two-stage LNAs /docs/en/supporting-information/RFLNA_TRN_SI.pdf /docs/en/supporting-information/RFLNA_TRN_SI.pdf Supporting Information N 371282830530968666 2023-06-19 pdf N en Oct 23, 2012 371282830530968666 Supporting Information Y N GaAs MMIC Two-stage LNAs false 0 MML09212H downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Data Sheet 1 /docs/en/data-sheet/MML09212H.pdf 2018-01-31 1349114847523705950195 PSP 1 Jan 30, 2018 Data Sheet The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. None /docs/en/data-sheet/MML09212H.pdf English documents 720392 None 980000996212993340 2024-08-22 N /docs/en/data-sheet/MML09212H.pdf Archived - MML09212H 400-1400 MHz, 22.8 P1dB LNA Data Sheet /docs/en/data-sheet/MML09212H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 3 N N Archived - MML09212H 400-1400 MHz, 22.8 P1dB LNA Data Sheet 720.4 KB MML09212H N 1349114847523705950195 Package Information 1 /docs/en/package-information/98ASA00227D.pdf 2017-12-21 1286376681419738938713 PSP 3 Nov 30, 2017 Package Information 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) None /docs/en/package-information/98ASA00227D.pdf English documents 279543 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00227D.pdf 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) /docs/en/package-information/98ASA00227D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) 279.5 KB SOT1677-1 N 1286376681419738938713 Supporting Information 1 /docs/en/supporting-information/RFLNA_TRN_SI.pdf 2012-10-09 1349153188079702993205 PSP 4 Oct 23, 2012 Supporting Information Two-stage LNAs support multiple protocols for wireless base stations None /docs/en/supporting-information/RFLNA_TRN_SI.pdf English documents 2593337 None 371282830530968666 2023-06-19 N /docs/en/supporting-information/RFLNA_TRN_SI.pdf GaAs MMIC Two-stage LNAs /docs/en/supporting-information/RFLNA_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 1 N N GaAs MMIC Two-stage LNAs 2.6 MB RFLNA_TRN_SI N 1349153188079702993205 true Y Products

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