945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

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The MRF9030NR1 and MRF9030NBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

Data Sheet

Application Notes

Documentation

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5 documents

Data Sheet
MRF9030NR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

PDFRev 12Sep 5, 2008495.6 KBMRF9030NEnglish
Application Note
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
Application Note
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Jun 7, 20068.3 MBAN3263English
Package Information
98ASA99191D, TO, 24.07x11.18x2.59, Pitch 6.35, 2 Pins

PDFRev FFeb 28, 201665.8 KBSOT1733-1English
Package Information
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English

Design Resources

Design Files

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1 design file

Receive the full breakdown. See the product footprint and more in the eCad file.

Calculators
MRF9030NR1, MRF9030NBR1 RF Power Electromigration MTTF Calculation Program

XLSRev 2Aug 4, 2006 00:00:0033.3 KBMRF9030N_MTTF_CALC

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945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

Documentation

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MRF9030NR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

98ASA99191D, TO, 24.07x11.18x2.59, Pitch 6.35, 2 Pins

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

Design Resources

Design Files

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MRF9030NR1, MRF9030NBR1 RF Power Electromigration MTTF Calculation Program

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