BGS8L2 LTE LNA with Bypass Switch Evaluation Board

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The BGS8L2 LTE LNA evaluation board simplifies the evaluation of the BGS8L2 LNA for the LTE application. The evaluation board enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with the BGS8L2, the input series inductor and a decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGS8L2 can operate from a 1.5 V to 3.1 V single supply and consumes about 5.2 mA.

Supported Devices

RF

Legacy RF Low-Medium Power Amplifiers

  • BGS8L2: SiGe:C Low-Noise Amplifier MMIC with Bypass Switch for LTE

Features

Key Features

  • Noise figure (NF) = 0.9 dB
  • Gain 13 dB
  • Bypass switch insertion loss of 1.9 dB
  • High input 1 dB compression point of -1 dBm
  • High out of band IP3i of 1.5 dBm
  • Integrated temperature stabilized bias for easy design
  • Integrated matching for the output
  • 180 GHz transit frequency - SiGe:C technology

Power Management

  • The BGS8L2 is optimized for 728 MHz to 960 MHz
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low 5.2 mA supply current
  • Power-down mode current consumption < 1 µA
  • ESD protection on all pins (HBM > 2 kV)
  • Input and output DC decoupled

Size

  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232

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BGS8L2 LTE LNA with bypass switch evaluation board.

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