BGU8M1 LTE LNA evaluation board

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The BGU8M1 LTE LNA evaluation board simplifies the evaluation of the BGU8M1 LNA for the LTE application. The evaluation board enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with the BGU8M1, the input series inductor and a decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGU8M1 can operate from a 1.5 V to 3.1 V single supply and consumes about 5 mA.

Supported Devices

RF

Legacy RF Low-Medium Power Amplifiers

  • BGU8M1: SiGe:C Low Noise Amplifier MMIC for LTE

Features

Power Management

  • The BGU8M1 is optimized for 1805 MHz to 2200 MHz
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low supply current of 5 mA
  • Power-down mode current consumption < 1 µA
  • Requires only one input matching inductor and one supply decoupling capacitor
  • ESD protection on all pins (HBM > 2 kV)
  • Input and output DC decoupled

Size

  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology
  • Integrated matching for the output
  • Integrated temperature stabilized bias for easy design
  • Noise figure (NF) = 0.9 dB
  • Gain = 13 dB
  • High input 1 dB compression point of -2 dBm
  • High out of band IP3i of 6 dBm

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BGU8M1 LTE LNA evaluation board.

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