Demo Board for BGS8H2 LTE LNA

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The BGS8H2 LTE LNA evaluation board simplifies the evaluation of the BGS8H2 LNA for the LTE application. The evaluation board enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with the BGS8H2, the input series inductor and a decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGS8H2 can operate from a 1.5 V to 3.1 V single supply and consumes about 5.8 mA.

Supported Devices

RF

Legacy RF Low-Medium Power Amplifiers

  • BGS8H2: SiGe:C Low-Noise Amplifier MMIC with Bypass Switch for LTE

Features

The BGS8H2 is optimized for 2300 MHz to 2690 MHz

  • Noise figure (NF) = 1.1 dB
  • Gain 12.5 dB
  • Bypass switch insertion loss of 2.3 dB
  • High input 1 dB compression point of -1.5 dBm
  • High out of band IP3i of 4 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low 5.8 mA supply current
  • Power-down mode current consumption < 1 µA
  • Integrated temperature stabilized bias for easy design
  • Requires only one input matching inductor and one supply decoupling capacitor
  • Input and output DC decoupled
  • ESD protection on all pins (HBM > 2 kV)
  • Integrated matching for the output
  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology

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OM17007
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Demoboard for BGS8H2 LTE LNA.

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