Demo Board for BGS8M2 LTE LNA

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The BGS8M2 LTE LNA evaluation board simplifies the evaluation of the BGS8M2 LNA for the LTE application. The evaluation board enables testing of the device performance and requires no additional support circuitry. The board is fully assembled with the BGS8M2, the input series inductor and a decoupling capacitor. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGS8M2 can operate from a 1.5 V to 3.1 V single supply and consumes about 5.8 mA.

Supported Devices

RF

Legacy RF Low-Medium Power Amplifiers

  • BGS8M2: SiGe:C Low-Noise Amplifier MMIC with Bypass Switch for LTE

Features

Key Features

  • The BGS8M2 is optimized for 1805 MHz to 2200 MHz
    • Noise figure (NF) = 0.9 dB
    • Gain 14.4 dB
    • Bypass switch insertion loss of 2.2 dB
    • High input 1 dB compression point of -3.5 dBm
    • High out of band IP3i of 3.5 dBm
    • 180 GHz transit frequency - SiGe:C technology
    • Integrated temperature stabilized bias for easy design

Connectivity

  • Input and output DC decoupled
  • Integrated matching for the output

Power Management

  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low 5.8 mA supply current
  • Power-down mode current consumption < 1 µA
  • Requires only one input matching inductor and one supply decoupling capacitor

Size

  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232

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OM17006
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Demoboard for BGS8M2 LTE LNA.

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