A5G26H606W19N | 2496–2690 MHz 85 W Avg, 48 V

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This 85 W asymmetrical Doherty radio frequency (RF) power gallium-nitride (GaN) transistor is designed for cellular base station applications that require very wide instantaneous bandwidth capability, covering the frequency range of 2496 to 2690 MHz.

Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high-performance in-package Doherty
High terminal impedances for optimal broadband performance
Advanced high-performance in-package Doherty
Improved linearized error vector magnitude with next-generation signal
Able to withstand extremely high-output voltage standing wave Ratio (VSWR) and broadband operating conditions
Plastic package

RF Performance Table 2600 MHz

Frequency	Gps_(dB)	ηD (%)	Output PAR _(dB)	ACPR (dBc)
2496 MHz	14.3	53.6	7.9	-27.8
2595 MHz	14.6	52.3	7.9	-32.7
2690 MHz	13.9	50.8	8.0	-35.4

Typical Doherty single-carrier W-CDMA reference circuit performance

V_DD = 48 V_dc, I_DQA = 300 mA, V_GSB = -4.5 Vdc, P_out = 85 W Avg., input signal PAR = 9.9 dB @ 0.01 % probability on CCDF⁽¹⁾. All data measured with device soldered to NXP reference circuit.

Buy/Parametrics

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Documentation

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3 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A5G26H606W19N 2496–2690 MHz 85 W Avg., 48 V Data Sheet[A5G26H606W19N]

HTML | PDFApr 24, 2025Rev 1

Design Resources

Design Files

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4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A5G26H606W19N Peaking Class C S-Parameters

S2PRev 0Mar 19, 2025 15:36:00155.7 KBA5G26H606W19N-Peaking-Class-C

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A5G26H606W19N Peaking Class AB S-Parameters

S2PRev 0Mar 19, 2025 15:36:00155.6 KBA5G26H606W19N-Peaking-Class-AB

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A5G26H606W19N Carrier Class AB S-Parameters

S2PRev 0Mar 19, 2025 15:36:00155.5 KBA5G26H606W19N-Carrier-Class-AB

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Printed Circuit Boards and Schematics
A5G26H606W19N 2600 MHz PCB DXF file

ZIPRev 0Mar 19, 2025 15:07:0091.6 KBA5G26H606W19N-2600-PCB
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2496–2690 MHz 85 W Avg, 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table 2600 MHz

Buy/Parametrics

Documentation

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Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G26H606W19N 2496–2690 MHz 85 W Avg., 48 V Data Sheet[A5G26H606W19N]

A5G26H606W19N 2496–2690 MHz 85 W Avg., 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Design Resources

Design Files

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A5G26H606W19N Peaking Class C S-Parameters

A5G26H606W19N Peaking Class AB S-Parameters

A5G26H606W19N Carrier Class AB S-Parameters

A5G26H606W19N 2600 MHz PCB DXF file

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