1805-2170 MHz, 2.4 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifier

MW7IC2020N

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Product Details

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    28
  • Die Technology
    LDMOS

RF Performance Tables

Driver Application - 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 40 mA, IDQ2 = 230 mA, Pout = 2.4 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 33 Watts CW (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 20 Watts CW

Driver Application - 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 40 mA, IDQ2 = 230 mA, Pout = 2.4 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Documentation

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