3300-3700 MHz, 15.1 W Avg., 48 V Airfast® RF Power GaN Transistor

A5G35H110N

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity analog or digital linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    3300
  • Frequency (Max) (MHz)
    3700
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    49.4
  • Peak Power (Typ) (W)
    87
  • Die Technology
    GaN

RF Performance Table

3500 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 70 mA, VGSB = –4.1 Vdc, Pout = 15.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
3300 MHz14.857.67.5-27.9
3400 MHz15.455.77.8-29.3
3500 MHz15.854.08.0-30.8
3600 MHz15.854.37.8-31.1
3700 MHz14.954.37.4-31.0
1. All data measured in reference circuit with device soldered to printed circuit board.

Documentation

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4 documents

Design Resources

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Design Files

3 design files

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