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reenter your passwordThe RF Active Antenna Systems 2300-2700 MHz portfolio offers GaN and LDMOS multi-chip modules, discrete GaN, LDMOS ICs and SiGe solutions for cellular base stations, small cell and other wireless infrastructure applications, including LTE and 5G NR.
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| Product | Frequency Range | Supply Voltage | Peak Power | Third Order Intercept | Noise Figure @ Frequency | Die Technology |
|---|---|---|---|---|---|---|
| A3G26D055N | 100 - 2690 MHz | 48 V | 47.4 dBm, 55 W | - | - | GaN |
| A3I25D080N | 2300 - 2690 MHz | 28 V | 49.3 dBm, 85 W | - | - | LDMOS |
| A3I25D080N | 2300 - 2690 MHz | 28 V | 49.3 dBm, 85 W | - | - | LDMOS |
| A3M40PD012 | 2300 - 4200 MHz | 3.3 V | 25 dBm, 0.31 W | - | - | GaAs |
| A5G23H065N | 2300 - 2400 MHz | 48 V | 48 dBm, 63.1 W | - | - | GaN |
| A5G23H110N | 2300 - 2400 MHz | 48 V | 49.6 dBm, 92 W | - | - | GaN |
| A5G26H110N | 2496 - 2690 MHz | 48 V | 50.5 dBm, 112 W | - | - | GaN |
| A5G26S004N | 2300 - 2690 MHz | 48 V | 36 dBm, 4 W | - | - | GaN |
| A5G26S008N | 2300 - 2690 MHz | 48 V | 40.3 dBm, 10.7 W | - | - | GaN |
| A6G25H112WN | 2300-2690 MHz | 48 V | 112 W | - | - | GaN 5 |
| AFLP5G25641 | 2300 - 2700 MHz | 3.3, 5 V | - | - | - | GaAs |
| AFSC5G23E39 | 2300 - 2400 MHz | 28 V | 47.2 dBm, 52.5 W | - | - | LDMOS |
| AFSC5G26E38 | 2496 - 2690 MHz | 28 V | 45.8 dBm, 38 W | - | - | LDMOS |
| AFSC5G26E39 | 2496 - 2690 MHz | 27 V | 47.1 dBm, 51.3 W | - | - | LDMOS |
| BTS6201U | 2300 - 4200 MHz | 5 V | - | 35 dBm | - | SiGe |
| BTS6302U | 2300 - 5000 MHz | 5 V | - | 33 dBm | - | SiGe |
| BTS6303U | 2300 - 4200 MHz | 5 V | - | 29.2 dBm | - | SiGe |
| BTS6305U | 2300 - 4200 MHz | 5 V | - | 33 dBm | - | SiGe |
| BTS6403U | 2300 - 4200 MHz | 5 V | - | 34.5 dBm | - | SiGe |
| BTS7202H | 2300 - 2700 MHz | 5 V | - | - | 0.95 dB @ 2500 MHz | SiGe |
| BTS7203H | 2300 - 2700 MHz | 3 V | - | - | 1.3 dB @ 2500 MHz | SiGe |
| BTS7205H | 2300 - 2700 MHz | 3 V | - | - | 1.3 dB @ 2500 MHz | SiGe |