RapidRF Smart LDMOS Front-End Designs

RAPIDRFSL-FRONTEND

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NXP’s RapidRF Smart LDMOS front-end designs provide further integration with a highly efficient RF power amplifier, linear pre-driver, Rx LNA with T/R switch, and a circulator all in a compact footprint—and now includes the bias controller and temperature sensor within the power amplifier package. These designs incorporate a coupler for DPD feedback and are to be used with digital pre-distortion.

RapidRF reference boards are ideal for 5G radio units requiring 2.5 to 8 Watts (34-39 dBm) average transmit power at the antenna. A common PCB layout used for multiple frequency bands simplifies both design and manufacturing for faster time-to-market.

Block Diagram

RapidRF Smart LDMOS Front-End Block Diagram

RapidRF Smart LDMOS Front-End Block Diagram
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Supported Devices

RF

3200 - 6000 MHz

  • A3M36SL039: 3400-3800 MHz, 29 dB, 8 W Avg. Airfast® Power Amplifier Module with Autobias Control
  • A3M39SL039: 3700-3980 MHz, 28 dB, 8 W Avg. Airfast® Power Amplifier Module with Autobias Control
  • BTS7203U: 3.3 GHz-4.2 GHz RX Analog Front-end IC
  • BTS6201U: 5G Massive MIMO Pre-driver

Features

Design Files and Tools

  • Zip file includes:
    • Board layout
    • Schematic
    • Board parts list
    • Mechanical drawings

Buy Options

RAPIDRF-36SL039-Image

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RAPIDRF-36SL039
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RapidRF-36SL039 3400-3800 MHz RF Front-End Board.

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    RAPIDRF-39SL039-Image

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    RAPIDRF-39SL039
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    RapidRF-39SL039 3700-3980 MHz RF Front-End Board.

      Order from distributors

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