Design Files
2 design files
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Models
A5G35S008N S-Parameters
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Printed Circuit Boards and Schematics
A5G35S008N 3500 MHz PCB DXF file
3300-3800 MHz, 27 dBm Avg., 48 V Airfast® RF Power GaN Transistor
A5G35S008N Receive alerts
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.
Product Details
Features
- High terminal impedances for optimal broadband performance
- Designed for low complexity analog or digital linearization systems
- Universal broadband driver
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 3300
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- Frequency (Max) (MHz)
- 3700
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- Supply Voltage (Typ) (V)
- 48
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- Peak Power (Typ) (dBm)
- 40
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- Peak Power (Typ) (W)
- 10
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- Die Technology
- GaN
RF Performance Table
3500 MHz
Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 24 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 3300 MHz | 20.9 | 18.3 | 10.1 | -41.0 |
| 3400 MHz | 20.9 | 18.0 | 9.9 | -41.0 |
| 3500 MHz | 20.9 | 18.0 | 9.8 | -42.3 |
| 3600 MHz | 20.2 | 17.9 | 9.7 | -43.6 |
| 3700 MHz | 19.3 | 17.6 | 9.6 | -44.5 |
| 3800 MHz | 18.4 | 16.7 | 9.6 | -44.8 |