3300-3800 MHz, 32 dB, 9 W Avg. Airfast® Power Amplifier Module


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Product Details


  • 2−stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in−package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude
  • RoHS compliant

Part numbers include: A5M36TG140.

RF Performance Table

3300–3800 MHz

Typical LTE Performance: Pout = 9 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1)1. All data measured with device soldered in NXP reference circuit.


Quick reference to our documentation types.

1 documents

Design Resources

Design Files

1 design file


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