Design Files
2 design files
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Models
A5G35S004N S-Parameters
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Printed Circuit Boards and Schematics
A5G35S004N 3500 MHz PCB DXF file
3300-4300 MHz, 24.5 dBm Avg., 48 V Airfast® RF Power GaN Transistor
A5G35S004N Receive alerts
This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.
Product Details
Features
- High terminal impedances for optimal broadband performance
- Designed for low complexity digital linearization systems
- Universal broadband driver
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
RF Performance Table
3500 MHz
Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 12 mA, Pout = 24.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 3400 MHz | 19.3 | 19.5 | 9.9 | -38.7 |
| 3500 MHz | 19.4 | 20.0 | 9.7 | -40.3 |
| 3600 MHz | 18.8 | 20.4 | 9.4 | -42.1 |
3700–4000 MHz
Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 10 mA, Pout = 28 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 3700 MHz | 18.3 | 22.5 | 8.4 | -35.2 |
| 3800 MHz | 18.8 | 25.2 | 8.5 | -38.6 |
| 3900 MHz | 18.1 | 23.8 | 8.5 | -41.2 |
| 4000 MHz | 17.2 | 21.6 | 8.6 | -42.4 |
4100–4300 MHz
Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 10 mA, Pout = 28 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 4100 MHz | 17.6 | 26.5 | 7.6 | -33.2 |
| 4200 MHz | 17.2 | 26.5 | 7.8 | -36.2 |
| 4300 MHz | 16.5 | 26.5 | 7.9 | -38.3 |